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| BTA16 B BTB16 B STANDARD TRIACS .HI .COMMUTATI .BTAFami FEATURES DESCRIPTION GH SURGE CURRENT CAPABILITY ON : (dV/dt)c > 10V/s ly : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) The BTA/BTB16 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s Parameter BTA BTB ITSM A1 A2 G TO220AB (Plastic) Value Tc = 80 C Tc = 90 C tp = 8.3 ms tp = 10 ms 170 160 128 10 50 - 40 to + 150 - 40 to + 125 260 16 Unit A A I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 C C C Symbol BTA / BTB16-... B 600 600 700 700 800 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 400 V March 1995 1/5 BTA16 B / BTB16 B THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 2.9 2.3 2.2 1.75 C/W Unit C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s) VGM = 16V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix B IGT VD=12V (DC) RL=33 Tj=25C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL =33 Tj=25C Tj=125C Tj=25C Tj=25C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 22.5A tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C MAX MAX MAX MAX MIN MAX MAX MAX MIN TYP TYP 50 100 1.5 0.2 2 40 70 50 1.6 0.01 2 250 V/s mA V mA V V s mA mA Unit VD=VDRM R L=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s IG=1.2 IGT Linear slope up to VD =67%VDRM gate open (dI/dt)c = 7A/ms (dV/dt)c * Tj=125C MIN 10 V/s * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 BTA16 B / BTB16 B Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 3/5 BTA16 B / BTB16 B Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). 4/5 BTA16 B / BTB16 B PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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